unisonic technologies co., ltd. dta143t pnp silicon transistor www.unisonic.com.tw 1of 3 copyright ? 2011 unisonic technologies co., ltd qw-r206-058,e digital transistors (built- in bias resistors) ? features * built-in bias resistors that im plies easy on/off applications. * the bias resistors are thin-film resistors with complete isolation to allow positive input. ? equivalent circuit ? ordering information ordering number package pin assignment packing lead free halogen free 1 2 3 dta143tl-ae3-r dta143tg-ae3-r sot-23 e c b tape reel dta143tl-al3-r DTA143TG-AL3-R sot-323 e c b tape reel dta143tl-an3-r dta143tg-an3-r sot-523 e c b tape reel note: pin assignment: e: emitte r, b: base, c: collector dta143tl-ae3-r (1)packing type (2)package type (3)lead free (1) r: tape reel (2) ae3: sot-23, al3: sot-323, an3: sot-523 (3) g: halogen free, l: lead free ? marking
dta143t pnp silicon transistor unisonic technologies co., ltd 2 of 3 www.unisonic.com.tw qw-r206-058,e ? absolute maximum ratings (ta=25 c , unless otherwise specified ) parameter symbol ratings unit collector-base voltage v cbo -50 v collector-emitter voltage v ceo -50 v emitter-base voltage v ebo -5 v collector current i c -100 ma collector power dissipation sot-23/sot-323 p c 200 mw sot-523 150 mw junction temperature t j +150 storage temperature t stg -40~+150 note absolute maximum ratings are those values beyond which the device could be permanently damaged. absolute maximum ratings are stress ratings only and functional device oper ation is not implied. ? electrical characteristics (ta=25 c, unless otherwise specified.) parameter symbol test conditions min typ max unit collector-base breakdown voltage bv cbo i c =-50 a -50 v collector-emitter breakdown voltage bv ceo i c =-1ma -50 v emitter-base breakdown voltage bv ebo i e =-50 a -5 v collector cutoff current i cbo v cb =-50v -0.5 a emitter cutoff current i ebo v eb =-4v -0.5 a collector-emitter sa turation voltage v ce ( sat ) i c =-5ma, i b = -0.25ma -0.3 v dc current gain h fe v ce =-5v, i c = -1ma 100 250 600 input resistance r 1 3.29 4.7 6.11 k ? transition frequency f t v ce =-10v, i e =5ma, f=100mhz (note) 250 mhz note: transition frequency of the device
dta143t pnp silicon transistor unisonic technologies co., ltd 3 of 3 www.unisonic.com.tw qw-r206-058,e ? typical characteristics -0.1 dc current gain vs. collector current -1 1 20 collector current, ic (ma) 1000 -2 -5 500 200 100 50 10 5 2 -10 -20 -50 -100 -0.2 -0.5 -40 25 t a =100 v ce =-5v -1 -20 collector current, ic (ma) -1000 -500 -200 -100 -50 -10 -5 -2 collector-emitter saturation voltage vs. collector current 25 t a =100 -40 -0.1 -1 -0.2 -0.5 -2 -5 -10 -20 -50 -100 ic/i b =20 utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
|
